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Samsung M393A4K40CB2-CTD memory module 32 GB 1 x 32 GB DDR4 2666 MHz ECC

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  • 32GB DDR4
  • 2666 MHz
  • CL19
  • 1.2V
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SKU #: M393A4K40CB2-CTD
EAN #: 7640143872831
UNSPSC #: 43201402
More Information
Internal memory type DDR4
Memory clock speed 2666 MHz
ECC Yes
Memory form factor 288-pin DIMM
SKU M393A4K40CB2-CTD
EAN 7640143872831
Manufacturer Samsung
Availability Out of Stock
Power
Memory voltage1.2 V
Design
Product colourBlack, Green
Technical details
Product colourBlack, Green
Memory
Buffered memory typeRegistered (buffered)
Memory layout (modules x size)1 x 32 GB
Internal memory32 GB
Component forPC/Server
Memory form factor288-pin DIMM
CAS latency19
Memory voltage1.2 V
Memory ranking2
ECCYes
Memory clock speed2666 MHz
Internal memory typeDDR4
Features
Buffered memory typeRegistered (buffered)
Product colourBlack, Green
Memory layout (modules x size)1 x 32 GB
Internal memory32 GB
Component forPC/Server
Memory form factor288-pin DIMM
CAS latency19
Memory voltage1.2 V
Memory ranking2
ECCYes
Memory clock speed2666 MHz
Internal memory typeDDR4
Harmonized System (HS) code84733020
Operational conditions
Operating temperature (T-T)0 - 85 °C
Weight & dimensions
Width133.3 mm
Height31 mm
Logistics data
Harmonized System (HS) code84733020
Other features
Harmonized System (HS) code84733020
Samsung DDR4 Registered DIMMs (or RDIMMs) are designed with an additional hardware register between the DRAM module and the system’s memory controller. RDIMMs present several advantages for the system, such as a lower electrical load on the memory controller and sustained stability even with an increase in the number of installed memory modules. Thus, RDIMMs are often the default choice for deployment in server-class computing systems.

In addition to Registered DIMM’s features, Samsung DDR4 memory is available as Registered DIMM that it provides an optimized solution for highly virtualized environments, high-performance computing and networking. Semiconductor modules of Samsung DDR4 are designed with new system circuit architecture to deliver higher performance with low power requirements than previously available memory products. Doubled bandwidth, along with reduced voltage and dramatically lower power consumption, improves performance and optimizes the total cost of ownership. Samsung DDR4's enhanced reliability, availability and serviceability (RAS) features provide enhanced reliability and improved signal integrity (S/I).
Power
Memory voltage1.2 V
Design
Product colourBlack, Green
Technical details
Product colourBlack, Green
Memory
Buffered memory typeRegistered (buffered)
Memory layout (modules x size)1 x 32 GB
Internal memory32 GB
Component forPC/Server
Memory form factor288-pin DIMM
CAS latency19
Memory voltage1.2 V
Memory ranking2
ECCYes
Memory clock speed2666 MHz
Internal memory typeDDR4
Features
Buffered memory typeRegistered (buffered)
Product colourBlack, Green
Memory layout (modules x size)1 x 32 GB
Internal memory32 GB
Component forPC/Server
Memory form factor288-pin DIMM
CAS latency19
Memory voltage1.2 V
Memory ranking2
ECCYes
Memory clock speed2666 MHz
Internal memory typeDDR4
Harmonized System (HS) code84733020
Operational conditions
Operating temperature (T-T)0 - 85 °C
Weight & dimensions
Width133.3 mm
Height31 mm
Logistics data
Harmonized System (HS) code84733020
Other features
Harmonized System (HS) code84733020