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Samsung M393A2K43EB3-CWE memory module 16 GB 1 x 16 GB DDR4 3200 MHz ECC

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  • 16 GB
  • DDR4
  • 288-pin
  • RDIMM
  • 3200 MHz
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SKU #: M393A2K43EB3-CWE
EAN #: 5715063546529
UNSPSC #: 43201402
More Information
Internal memory type DDR4
Memory clock speed 3200 MHz
ECC Yes
Memory form factor 288-pin DIMM
SKU M393A2K43EB3-CWE
EAN 5715063546529
Manufacturer Samsung
Availability Out of Stock
Power
Memory voltage1.2 V
Technical details
Chips organisation2Rx8
Memory
Buffered memory typeRegistered (buffered)
Memory layout (modules x size)1 x 16 GB
Internal memory16 GB
Component forPC/Server
Memory form factor288-pin DIMM
CAS latency22
Memory voltage1.2 V
Module configuration1024M x 8
ECCYes
Memory clock speed3200 MHz
Internal memory typeDDR4
Features
Buffered memory typeRegistered (buffered)
Memory layout (modules x size)1 x 16 GB
Internal memory16 GB
Component forPC/Server
Memory form factor288-pin DIMM
CAS latency22
Memory voltage1.2 V
Module configuration1024M x 8
ECCYes
Memory clock speed3200 MHz
Internal memory typeDDR4
Other features
Chips organisation2Rx8
Registered DIMM
Includes a register for enhancing clock, command and control signals Error correction available by added 8 bit parity signals Supports x4 / x8 Organization / up to 2 ranks per DIMM and 3DPC configuration Application : Server
Power
Memory voltage1.2 V
Technical details
Chips organisation2Rx8
Memory
Buffered memory typeRegistered (buffered)
Memory layout (modules x size)1 x 16 GB
Internal memory16 GB
Component forPC/Server
Memory form factor288-pin DIMM
CAS latency22
Memory voltage1.2 V
Module configuration1024M x 8
ECCYes
Memory clock speed3200 MHz
Internal memory typeDDR4
Features
Buffered memory typeRegistered (buffered)
Memory layout (modules x size)1 x 16 GB
Internal memory16 GB
Component forPC/Server
Memory form factor288-pin DIMM
CAS latency22
Memory voltage1.2 V
Module configuration1024M x 8
ECCYes
Memory clock speed3200 MHz
Internal memory typeDDR4
Other features
Chips organisation2Rx8