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Kingston Technology KSM32SES8/16MF memory module 16 GB 1 x 16 GB DDR4 3200 MT/s ECC
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- 16GB
- DDR4
- 3200MT/s
- ECC
- Unbuffered
SKU #: KSM32SES8/16MF
EAN #: 0740617328394
UNSPSC #: 43201402
- Functionality and operations comply with the DDR4 SDRAM datasheet
- 16 internal banks
- Bank Grouping is applied, and CAS to CAS latency (tCCD_L, tCCD_S) for the banks in the same or different bank group accesses are available
- Bi-Directional Differential Data Strobe
- 8 bit pre-fetch
- Burst Length (BL) switch on-the-fly BL8 or BC4(Burst Chop)
- Supports ECC error correction and detection
- On-Die Termination (ODT)
- Temperature sensor with integrated SPD
- This product is in compliance with the RoHS directive
- Per DRAM Addressability is supported
- Internal Vref DQ level generation is available
- Write CRC is supported at all speed grades
- CA parity (Command/Address Parity) mode is supported
| Internal memory type | DDR4 |
|---|---|
| ECC | Yes |
| Memory form factor | 260-pin SO-DIMM |
| Component for | Notebook |
| SKU | KSM32SES8/16MF |
| EAN | 0740617328394 |
| Manufacturer | Kingston Technology |
| Availability | Out of Stock |
| PDF URLs |
View PDF |
| Power | |
|---|---|
| Memory voltage | 1.2 V |
| Design | |
| JEDEC standard | Yes |
| Memory | |
| Buffered memory type | Unregistered (unbuffered) |
| Memory layout (modules x size) | 1 x 16 GB |
| Internal memory | 16 GB |
| Component for | Laptop |
| Memory form factor | 260-pin SO-DIMM |
| CAS latency | 22 |
| Memory voltage | 1.2 V |
| Lead plating | Gold |
| Module configuration | 2048M x 72 |
| Row cycle time | 45.75 ns |
| Refresh row cycle time | 350 ns |
| Row active time | 32 ns |
| SPD profile | Yes |
| Memory ranking | 1 |
| ECC | Yes |
| Internal memory type | DDR4 |
| Programming power voltage (VPP) | 2.5 V |
| Features | |
| Buffered memory type | Unregistered (unbuffered) |
| Memory layout (modules x size) | 1 x 16 GB |
| Internal memory | 16 GB |
| Component for | Laptop |
| Memory form factor | 260-pin SO-DIMM |
| CAS latency | 22 |
| Memory voltage | 1.2 V |
| Lead plating | Gold |
| Module configuration | 2048M x 72 |
| Row cycle time | 45.75 ns |
| Refresh row cycle time | 350 ns |
| Row active time | 32 ns |
| SPD profile | Yes |
| Memory ranking | 1 |
| ECC | Yes |
| Internal memory type | DDR4 |
| Programming power voltage (VPP) | 2.5 V |
| JEDEC standard | Yes |
| Harmonized System (HS) code | 84733020 |
| Memory data transfer rate | 3200 MT/s |
| Operational conditions | |
| Operating temperature (T-T) | 0 - 85 °C |
| Storage temperature (T-T) | -55 - 100 °C |
| Technical details | |
|---|---|
| Doesn't contain | Halogen |
| Compliance certificates | RoHS |
| Sustainability | |
| Doesn't contain | Halogen |
| Weight & dimensions | |
| Width | 69.6 mm |
| Depth | 3.7 mm |
| Height | 30 mm |
| Logistics data | |
| Harmonized System (HS) code | 84733020 |
| Other features | |
| Harmonized System (HS) code | 84733020 |
Kingston's KSM32SES8/16MF is a 2G x 72-bit (16GB) DDR4-3200 CL22 SDRAM (Synchronous DRAM) w/ parity, 1Rx8, ECC, memory module, based on nine 2G x 8-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR4-3200 timing of 22-22-22 at 1.2V. Each 260-pin SODIMM
uses gold contact fingers.
uses gold contact fingers.
| Power | |
|---|---|
| Memory voltage | 1.2 V |
| Design | |
| JEDEC standard | Yes |
| Memory | |
| Buffered memory type | Unregistered (unbuffered) |
| Memory layout (modules x size) | 1 x 16 GB |
| Internal memory | 16 GB |
| Component for | Laptop |
| Memory form factor | 260-pin SO-DIMM |
| CAS latency | 22 |
| Memory voltage | 1.2 V |
| Lead plating | Gold |
| Module configuration | 2048M x 72 |
| Row cycle time | 45.75 ns |
| Refresh row cycle time | 350 ns |
| Row active time | 32 ns |
| SPD profile | Yes |
| Memory ranking | 1 |
| ECC | Yes |
| Internal memory type | DDR4 |
| Programming power voltage (VPP) | 2.5 V |
| Features | |
| Buffered memory type | Unregistered (unbuffered) |
| Memory layout (modules x size) | 1 x 16 GB |
| Internal memory | 16 GB |
| Component for | Laptop |
| Memory form factor | 260-pin SO-DIMM |
| CAS latency | 22 |
| Memory voltage | 1.2 V |
| Lead plating | Gold |
| Module configuration | 2048M x 72 |
| Row cycle time | 45.75 ns |
| Refresh row cycle time | 350 ns |
| Row active time | 32 ns |
| SPD profile | Yes |
| Memory ranking | 1 |
| ECC | Yes |
| Internal memory type | DDR4 |
| Programming power voltage (VPP) | 2.5 V |
| JEDEC standard | Yes |
| Harmonized System (HS) code | 84733020 |
| Memory data transfer rate | 3200 MT/s |
| Operational conditions | |
| Operating temperature (T-T) | 0 - 85 °C |
| Storage temperature (T-T) | -55 - 100 °C |
| Technical details | |
|---|---|
| Doesn't contain | Halogen |
| Compliance certificates | RoHS |
| Sustainability | |
| Doesn't contain | Halogen |
| Weight & dimensions | |
| Width | 69.6 mm |
| Depth | 3.7 mm |
| Height | 30 mm |
| Logistics data | |
| Harmonized System (HS) code | 84733020 |
| Other features | |
| Harmonized System (HS) code | 84733020 |